Abstract
High performance has been realized by gate length scaling of MOSFET. Recently, not only gate length scaling but also aggressive advanced technology has been introduced for high performance MOSFET. Those are increase of mobility due to stress for the channel, decrease of gate leakage current by using high K dielectric material and suppression of gate depletion by introducing metal gate electrode. In this paper, the affection to analog / RF performance from those techniques are presented.
