Abstract
An image-rejection low-noise amplifier (LNA) based on 0.18-μm SiGe BiCMOS technology was developed in order to create a 24GHz-band RF receiver front-end. Its high image-rejection ratio (IRR) in the quasi-millimeter-wave frequency region is due to the use of a notch feedback circuit. The LNA has a 14-dB gain at an operating frequency of 27.2GHz and an IRR greater than 50dB IRR at an image frequency of 21.6GHz. While its IIP3 is -14dBm, its power consumption with a 1.2-V power supply is also low, 7.9mW.
