Sub-Terahertz/Terahertz Devices Based on Two-Dimensional Plasmons in Transistor Structures

Abstract

Recent progresses in the research of two types of sub-terahertz (THz)/THz devices based on two-dimensional plasmons in transistor structures, asymmetric dual-grating-gate (A-DGG) InP HEMTs for the detection and A-DGG graphene FETs for the emission, are reviewed. For the A-DGG InP HEMTs, their operation principle, broadband characteristics of their intrinsic detection responsivities, and strategies for improvement of their external responsivities are discussed. For A-DGG graphene FETs, their operation principle and computation prediction of the occurrence of giant plasmon instabilities are discussed.