PROCEEDINGS OF THE ITE WINTER ANNUAL CONVENTION
Online ISSN : 2424-2306
Print ISSN : 1343-4357
ISSN-L : 1343-4357
2007
Session ID : 8-5
Conference information

8-5 The gate insulator of amorphous silicon thin film transistor
Keita INOUEHokuto SEOSatoshi AIHARATetsuya HAYASHIDAHiroshi OHTAKETakayuki HAMAMOTO
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CONFERENCE PROCEEDINGS FREE ACCESS

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Abstract
We study the gate insulators of amorphous silicon thin film transistor(a-Si TFT). We confirmed that silicon oxide films using TEOS deposited by p-CVD is suitable for the gate insulator of a-Si TFT.
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© 2007 The Institute of Image Information and Television Engineers
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