NCTAM papers, National Congress of Theoretical and Applied Mechanics, Japan
53rd NCTAM papers, National Congress of Theoretical and Applied Mechanics, Japan
Session ID : 3B1
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OS19
A kinetic simulation of silicon film growth in plasma-enhanced chemical vapor deposition
*koji satakeyasuyuki kobayashi
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Abstract
A numerical modeling of microcrystalline silicon film growth is presented. A first principle quantum chemical calculation is applied to estimate the rate constants of the surface reactions. Dynamic Monte Carlo simulations of the surface reaction are carried on Si(100) facet composing the surface of 110 oriented microcrystalline silicon preferred in PECVD with gas mixture of SiH4 and H2. Finally a microcrystalline silicon film growth is simulated by a three-dimensional model based on the growth rates of (100) and (111) facets. The results of simulations show a good agreement with experimental results.
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© 2004 Committee for Mechanics and Structure,Science Council
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