日本マイクログラビティ応用学会誌
Print ISSN : 0915-3616
InAs-GaAs Interdiffusion Measurements
Kyoichi KINOSHITA Hirokazu KATOSatoshi MATSUMOTOShinichi YODAJianding YUMakoto NATSUISAKATadahiko MASAKINaokiyo KOSHIKAWAYasuhiro NAKAMURATomihisa NAKAMURAAkio OGISOSinichi AMANOKazumasa GOTOYoshito ARAlTomoharu FUKAZAWAMinoru KANEKOToshia ITAMI
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ジャーナル オープンアクセス

2000 年 17 巻 2 号 p. 57-

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Interdiffusion coefficients of the InAs-GaAs system and self diffusion coefficients of InAs in the system InAs-113 InAs have been measured accurately by using the sounding rocket TR-IA#7 and the shear cell method combined with glass sealing technique in microgravity. Measured diffusion coefficients were in the range between 1.2 to 4.1 x 10-s m2/sat temperatures between 1070 and 1200°C. Two significant digits were obtained for regular composi­tional profiles. In the measured temperature range, diffusion coefficients seemed to be dependent on T5•
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© 2000 The Japan Society of Microgravity Application
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