液体の拡散現象と液体構造解析

抄録

In recent years the accurate diffusion coefficient of the semiconductor melts is indispensable for the optimization of the growth process of the single crystal. The crystal growth simulation requires the accuracy of the diffusion coefficient over 95％. If we perform the diｆｆusion experiment such an accuracy, we need a few hours at high temperature condition. It is difficult to keep liquid samples at such high temperatures on the ground for such a long time without the thermal convection. It is recognized that the diｆｆusion coefficient can be measured in an error of less than 1％ under microgravity. Nevertheless, it is the fact that there are limited opportunities of microgravity experiments. Therefore, it is deeply desired to establish the reliable model of diffusion in the liquid states, by which we can estimate the diffusion coefficient of the melts of semiconductors reliably. As is well known that the liquid is characterized by the particular feature of the short range order. Therefore, it is extremely important for the establishment of model of diffusion to study the structure of liquids in detail.