無容器法による過冷却融液からの半導体成長メカニズム

抄録

Highly pure Si was undercooled by an electromagnetic levitator combined with a laser heating unit. The crystal growth velocity was measured as a function of undercooling and the appearance of the solid-liquid interface was observed by a high-speed camera. The result was compared with the predicted value based on the dendrite growth theory. The growth behaviors of Si were found to be classiˆed into three categories of disk-like growth, isolated dendrite growth, and closer dendrite growth at low, moderate, and high undercooling values, respectively. The transition undercoolings for the classifications were 100 and 210 K.