The paper describes the methods to grow homogeneous ternary alloy semiconductor bulk crystals. InxGa1-xSb bulk crystal was grown on a GaSb seed under a constant temperature gradient using a GaSb(seed)/InSb/GaSb(feed) sandwich sample. A GaSb feed was dissolved into the InGaSb solution to supply GaSb component during the growth. The temperature gradient in the solution was estimated from the indium composition profile of the grown crystal using the InSb-GaSb pseudo binary phase diagram. In order to measure growth rate, tellurium impurity striations were intentionally introduced into the crystal by thermal pulse technique. The growth rate gradually increased to the constant value and then rapidly decreased. Nearly homogeneous In0.03Ga0.97Sb within the fluctuation of 0.005 was grown by cooling the sample at the optimized value estimated from the temperature gradient and the growth rate. The method was applied to grow homogeneous InxGa1-xSb ternary alloy bulk crystal on an InSb seed. The nearly homogeneous In0.8Ga0.2Sb and In0.6Ga0.4Sb crystals within the fluctuation of 0.05 were grown by decreasing the temperature with an optimized cooling rate of 0.77 ˚C/h and 0.33 ˚C/h, respectively.
