We have succeeded in growing homogeneous InGaAs single crystals by the traveling liquidus-zone (TLZ) method. In the TLZ growth, crystallographic orientation of grown crystals indicates anomalous feature. That is, crystallographicaxis of terminal grown parts orients to feeds’ direction, not to seeds’ direction. This research aims at specifying the factor of such unique crystallization. Quenching experiments were performed to analyze composition and crystallographic orientation at the initial state of the TLZ growth process. As a result, a single crystal of slender InGaAs was grown in the narrow gap between the feed GaAs and the wall of the BN crucible. We conclude that this slender InGaAs single crystal is the trigger of the single crystallization. Besides, we suggest that the slender InGaAs single crystal is not dissolved in the TLZ growth process and platy InGaAs single crystals which take over the feeds’ orientation are grown.
