抄録
In this study, we theoretically optimize a two-dimensional (2D) channel doping profile of metal-oxide-semiconductor field-effect transistors (MOSFETs) with given current voltage (I-V) characteristics by using a geometric programming (GP) technique. Inverse modeling of channel doping profile for device characteristics with simultaneously considering the short-channel effect (SCE) and random-dopant-fluctuation-induced threshold voltage fluctuation (RDF-induced σVt) is advanced. The formulated model of doping profile is a GP problem which can be transformed into a convex optimization problem and solved globally and efficiently. Constrains of I-V characteristics with including the RDF-induced σVt are included to optimize desired doping profiles. The optimization methodology is applied for 45-nm MOSFET devices and the results are validated with 2D numerical device simulation. This approach provides an alternative way to design doping profile for various technologies of MOSFETs.
