Journal of Advanced Simulation in Science and Engineering
Online ISSN : 2188-5303
ISSN-L : 2188-5303
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Simulation and modeling of off-leakage current in InGaZnO thin-film transistors
Go WakimuraYoshimitsu YamauchiYoshinari Kamakura
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2015 Volume 2 Issue 1 Pages 201-210

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Abstract

We investigate the mechanism of off-leakage current in InGaZnO (IGZO) thin-film transistors with the help of a two-dimensional device simulator. The deep donorlike states probably originating from the oxygen vacancies are introduced in the IGZO channel, and it is shown that these trap states significantly affect IdVg characteristics in the off-state region through the pinning of the channel potential. A simple analytical model to explain the simulation results is proposed, which suggests that the off-leak characteristics is controlled by the amount and the depth of the deep donorlike states as well as the thicknesses of IGZO and SiO2 layers in TFT.

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© 2015 Japan Society for Simulation Technology
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