Abstract
A high external quantum efficiency observed for organic light-emitting diodes using PTZ-BZP (PTZ: 10-hexyl-phenothiazin, and BZP:4-phenyl-2,1,3-benzothiadiazole) is attributed to fluorescence from S1 via reverse intersystem crossing from the T3 or T2 state under electrical excitation. The radiative and non-radiative transitions from these higher triplet states to the lower triplet states are suppressed because of their small overlap densities. In this study, a principle to design such an electronic structure is proposed.