Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)
Online ISSN : 1882-1022
Print ISSN : 0914-5400
ISSN-L : 0914-5400
論文
顕微ラマン散乱による窒化アルミニウム半導体製造装置用部品の耐食性に関する研究
藤森 宏高田村 洋二針田 彬井奥 洪二垣花 眞人吉村 昌弘後藤 誠史
著者情報
ジャーナル フリー

2003 年 111 巻 1300 号 p. 935-938

詳細
抄録

A micro-Raman spectroscopic investigation has been performed to observe structural disorder in each grain of aluminum nitride ceramics as semiconductor equipment parts. A selective thermal oxidation treatment normalizes a different rate of a corrosion reaction depending on the crystal face and consequently improves the corrosion resistance. Upon thermal oxidation treatment, line widths of Raman bands increased more in grains including mainly crystals with (100) preferred orientation than in those of (002), indicating that (100) faces oxidize preferentially rather than (002) faces. According to Raman shift from the oxidized sample, oxidation induces residual compressive stress for grains including a large number of (100) prefer-oriented crystals. On fluorination of the oxidized sample, no increase of line widths was observed in both kinds of grains, suggesting that prior anisotropic thermal oxidation treatment of (100) faces, which are more sensitive to corrosion than (002) faces, inhibits the progress of corrosion.

著者関連情報
© 2003 The Ceramic Society of Japan
前の記事
feedback
Top