Journal of the Ceramic Society of Japan (日本セラミックス協会学術論文誌)
Online ISSN : 1882-1022
Print ISSN : 0914-5400
ISSN-L : 0914-5400
論文
分光エリプソメトリー及びエネルギー可変陽電子消滅法による シリカスパッタ薄膜の細孔構造解析
伊藤 賢志于 潤升小林 慶規佐藤 公法平田 浩一富樫 寿道田 泰子鈴木 良一大平 俊行
著者情報
ジャーナル フリー

2004 年 112 巻 1306 号 p. 338-341

詳細
抄録
Nanopore structure of silica thin films prepared by magnetron sputtering under various conditions was investigated by spectroscopic ellipsometry and variable-energy positron annihilation. Film overall porosity, evaluated by ellipsometry, was found to decrease, asymptotically to zero, with decreasing argon pressure and film thickness. This result is in qualitative agreement with our oxygen gas permeability data of silica films on polymeric substrate. Positron annihilation showed that nanometer-size pores were present in films prepared at an argon pressure of 1.5 Pa, whereas subnanometer-size pores were present in films prepared at an argon pressure of 0.25 Pa. In both cases, the pore sizes were decreased with decreasing film thickness.
著者関連情報
© 2004 The Ceramic Society of Japan
前の記事 次の記事
feedback
Top