Oxidation tests on powdered green silicon carbide, mainly of the Type 6 H with 13.4μ or 21.6μ diameters, were carried out in dry oxygen of one atmospheric pressure for about 50 hours in the range of temperature from 810° to 1400°C. The result show that the oxidation increases with temperature.
An empirical equation for the rate of oxidation of silicon carbide powders is given as follows;
{R0 (I→√I-X)}N=Kt,
Where X stands for the oxidation rate, t for time, R0 for mean radius, and N and K are constants.
At temperatures below 1200°C N was in the range of 1.7-1.5, while at temperatures from 1300° to 1400°C it was nealy 2.
From the studies of X-ray powder method, silica liberated by oxidation was found to take the form of cristobalite at the temperature above 1350°C, but below 1200°C the gel-like structure.
A discusion is given on the empirical equation.