高周波スパッタリングによるLi2O-SiO2系およびLi2O-B2O3-SiO2系非晶質薄膜の作製とイオン導電率
1987 年 95 巻 1097 号 p. 145-147
詳細
1987 年 95 巻 1097 号 p. 145-147
Amorphous thin films in the systems Li2O-SiO2 and Li2O-B2O3-SiO2 are prepared by rf-magnetron sputtering, and their electrical properties are investigated in order to develop solid electrolytes for thin film solid state ionic devices. These films exhibit high electrical conductivities ranging from 10-4 to 10-7Sm-1 at room temperature.
