H2-CO2を酸化ガスに用いたCVD法によるZrO2膜の作製
1993 年 101 巻 1170 号 p. 237-239
詳細
1993 年 101 巻 1170 号 p. 237-239
Zirconium oxide films were prepared at 600° to 1000°C by chemical vapor deposition using a β-diketone chelate of Zr as a source material and a mixture of H2 and CO2 as a oxidation gas. The deposition rate of the films increased from 4 to 10μm/h with increasing deposition temperature. The film obtained at 650°C was amorphous. The films deposited at 850° and 1000°C consisted of the tetragonal phase and the mixture of the tetragonal and monoclinic phases of ZrO2, respectively. A fine-grain structure was observed for all the films prepared at 600° to 1000°C.
