Submicron semiconductive epitaxial BaTiO3 thin film was prepared on (100) MgO substrate. An epitaxially grown BaTiO3 film prepared by MOCVD was coated with ethanol solution of LaCl3 and heated under a reducing atmosphere at 800-1200°C. The resistivity was less than 1Ω·cm and the carrier concentration was in the order of 1018cm-3. The film was n-type semiconductor and the resistivity increased abruptly with the increase in temperature above 600°C in air because of the decrease of the carrier concentration.
