XPS-SIMSによるAu/Si₃N₄界面反応の分析

抄録

Interface reaction between Au film and single-crystal α-Si₃N₄ was analyzed with depth profile by X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). Diffusion of Si from the Si₃N₄ to the Au film surface was observed by SIMS. Clear evidence which indicates low-temperature (600°C) solid reaction between Au and Si₃N₄ was also observed. The interface region exhibited peaks corresponding to Au-Si bond, Si-N bond and dangling nitrogen bond in the XPS spectra. It is considered that the Au-Si bond was formed by dissociating Si-N bond, and the reaction mechanism is similar to Au-Si reaction at Au/Si in-terface. In the case of Au and amorphous SiN_x, the interface reaction was more remarkable than that of the single-crystal Si₃N₄.