二段階マイクロ波プラズマCVDによるタングステン線へのダイヤモンドの核生成促進と密着性
1998 年 106 巻 1238 号 p. 974-979
詳細
1998 年 106 巻 1238 号 p. 974-979
Fine-grained and adherent diamond coating was obtained by the two-stage microwave plasma chemical vapor deposition (CVD) in the CO-H2 system on a tungsten wire substrate mounted horizontally 2mm upward on pyrophyllite susceptor. The susceptor was placed parallel to the irradiation direction of microwave. The nucleation density of diamond was found to increase with increasing the microwave power up to 1000W. The first stage CVD conditions for fine-grained diamond coating on tungsten wire were determined as microwave power: 900W, pressure. 2kPa and CO concentration: 5 vol%. On the other hand, the second stage CVD conditions for higher growth rate of diamond film were determined as microwave power: 550W, pressure: 4kPa and CO concentration: 10 vol%. Homogeneous and adherent diamond coating with a thickness of 16μm was prepared by the two-stage CVD process for a total treatment time of 10h (the first stage of 3h and the second stage of 7h) on tungsten wire of 1.0-mm diameter. A WC interlayer was formed during the CVD process.
