2000 年 108 巻 1264 号 p. 1096-1102
The oxidation behavior of stoichiometric SiC fiber (Hi-Nicalon-S) was investigated and compared with those of Nicalon and Hi-Nicalon fibers. Hi-Nicalon-S fiber was oxidized in Ar-O2 gas mixtures with 25-100% O2 at 1273-1773K. The oxidation rates were measured with thermobalance experiments. The thickening in SiO2 film produced a large decrease in the strength of the as-oxidized fiber. The SiO2 film-removed fiber (unoxidized core) retained high strength independent of the SiO2 film thickness. The oxidation rate obeyed the diffusion-controlled contracting-disc formula. The rate constant was proportional to the oxygen partial pressure of Ar-O2 gas mixture. The activation energy was 79kJ/mol. The oxidation rate was considered to be controlled by the diffusion of oxygen molecule through the micropores in SiO2 film. Compared to Nicalon and Hi-Nicalon, Hi-Nicalon-S is resistant to oxidation and has good strength in the oxidized state.