PTシード層を用いたCSD法PLZT薄膜の低温形成と配向制御

抄録

Lanthanum-modified lead zirconate titanate (PLZT) thin films with a La/Zr/Ti ratio of 10/65/35 were deposited on indium tin oxide (ITO)-coated soda lime glass substrates through chemical solution deposition method. Effects of excess lead addition of 30mol% in the precursor solution and/or insertion of a lead titanate (PT) film as a seeding layer between ITO and PLZT films on the crystallization behavior of the resultant PLZT thin films were investigated by X-ray diffraction. In addition, a PbO thin film was deposited on the PT seeding layer in order to control the orientation of PLZT thin films. As a result, single phase perovskite films with ferroelectricity could be successfully deposited at 450°C. Electrical properties of the resultant films were measured.