ゾルーゲル法によるジルコン独立膜の形成に及ぼす添加剤の効果
2002 年 110 巻 1277 号 p. 63-66
詳細
2002 年 110 巻 1277 号 p. 63-66
Self-supported zircon films were successfully formed by heat-treating a gel prepared from the precursor solution of Zr(OC4H9)4 and Si(OC2H5)4 by the sol-gel method. The effect of additives, such as Ni(NO3)2, Cu(NO3)2 and CuCl2, on the formation of zircon film was examined. It was found that the addition of Cu(NO3)2 in precursor solution was effective for obtaining a single-phase zircon at low heat-treatment temperature. From thermal analyses and X-ray diffractometry, the crystallization temperature of zircon was found to be about 950°C. A zircon film with the size of 8mm×8mm×6μm was obtained which did not contain any crack.
