TiO2 films were obtained from Ti(OC3H7)4 vapor with a high growth rate of ca. 40nms-1 by laser assisted CVD. In particular, laser beam increased the growth rate at 400°C more than 2.5 times. These increases in the growth rate might be attributable to the promotion of a homogeneous nucleation by laser beam in the gas phase above the substrate. Anatase films emerged at 500°C or above without the assistance of laser beam instead of amorphous films at lower temperatures. On the other hand, anatase films emerged even at 400°C or above with the assistance of laser beam. The activation energy for TiO2 film formation by this work was 17kJmol-1 similar to that by the traditional CVD.
