TaNx-TiN films were prepared on fused silica substrates from the gas mixture of TaCl5-TiCl4-N2-H2 under an atmospheric pressure. The deposition rate, constituent phase, chemical composition and microstructure of the films were investigated as a function of deposition temperature and input gas composition. The films consisted of TaNx and TiN. At the deposition temperature of 900°C, the deposition rate and the composition of TaNx-TiN films were in good agreement with expectations based on each deposition behavior of TaNx and TiN films. On the other hand, at 1000° and 1100°C, the deposition of TaNx was suppressed in TaNx-TiN films compared with the expectation. TaNx-TiN films were consisted of finer particles comparing with TaNx and TiN films.
