1990 年 98 巻 1134 号 p. 231-233
Transmission Electron Microscopy (TEM) observations were made on the interface joining a single crystal and a sintered polycrystal of α-SiC. It is shown, that the dihedral angles between boundaries are almost the same at triple junctions where a grain boundary in the polycrystal meets the joined interface and that along the interface there is an amorphous-like layer of approximately 7nm in thickness.