Rfマグネトロンスパッタリング法による 〔(1-x)PbTiO₃+xMgO〕 薄膜の作製とその電気伝導特性

抄録

Highly c-axis oriented thin films with compositions of [(1-x)PbTiO₃+xMgO] (x=0.015-0.090) were prepared by the rfmagnetron sputtering method. A few physical and electrical properties of these thin films obtained were studied PMT thin films of 1μm thickness showed that the degree of c-axis orientation α were approximately 0.8 and independent of compositionx. On the other hand, from the relationship between α and film thickness on the PMT thin films with x=0.030, α showed a tendency to decreased with increasing film thickness. It is considered that these thin films are successfully grown with good heteroepitaxy on MgO substrates from the RHEED pattern of PMT thin film with x=0.030. A range of I∝Vⁿ, where n≥2, was observed at high electric field below 250°C in I-V characteristics. This was considered to be due to an effect of vacancy in thin films. Apparent activation energy U_a of PMT thin films agreed with those of PMT single crystals and direct current resistivity ρ of films exhibited rather large values compared with those of single crystals.