Feature: Preparation of Ceramic and Related Materials via Novel Chemical Processing: Papers
Microstructure and electrical properties of BaTiO3 thin films by modified CSD
2011 年 119 巻 1390 号 p. 498-501
詳細
2011 年 119 巻 1390 号 p. 498-501
0.3 M BaTiO3 (BT) precursor solution was prepared by the modified CSD, in which partially hydrolyzed Ti-alkoxide and Ba precursor solution was reacted in iced water bath to prepare the highly polymerized BT precursor solution. The BT precursor solution was spin-coated on a Pt/Ti/SiO2/Si substrate with and without (100)-oriented LaNiO3 (LNO) thin film electrode. In addition, effect of the pre-annealing at 600°C in O2 atmosphere was elucidated by measuring the electrical properties of the resulting BT thin films deposited by the different annealing process. The results clearly indicated that the 600°C pre-annealing and the LNO thin film electrode are effective to enhance the electrical properties of the resultant BT thin films from the precursor solution by the partial hydrolysis method.
