Journal of the Ceramic Society of Japan
Online ISSN : 1348-6535
Print ISSN : 1882-0743
ISSN-L : 1348-6535
Feature: Functions and Materials Design at Interfaces: Reviews
Heterointerfaces: atomic structures, electronic states, and related properties
Zhongchang WANGMitsuhiro SAITOSusumu TSUKIMOTOYuichi IKUHARA
ジャーナル フリー

2011 年 119 巻 1395 号 p. 783-793


Recent breakthroughs in transmission electron microscopy enable a direct quantitative determination of the technologically significant heterointerfaces, yet a direct interpretation is not always possible. Here, we review the general processes to introduce the high-precision first-principles calculations into the microscopy in order to obtain an atomistic understanding of effects of buried interfaces on a wide range of properties. We demonstrate the possibility and important advance of this combined method in relating interface structures to device physics even for the complex heterointerfaces, SiC/Ti3SiC2, LaxSr1−xO/(SrTiO3)n, and Pd/ZnO presented here. We therefore believe that this approach should be widely applicable to many other interfaces and a range of materials, providing new insights into many long-standing unresolved issues regarding interfaces.

© 2011 The Ceramic Society of Japan
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