Papers
Synthesis of SiC via low-temperature heating of graphite and Si with Na flux
2013 年 121 巻 1419 号 p. 930-933
詳細
2013 年 121 巻 1419 号 p. 930-933
SiC was prepared by heating a mixture of graphite and Si powders with sodium over the temperature range 1173–1273 K and was characterized via X-ray diffraction, electron microscopy, and electron diffraction. The sample prepared at 1273 K exhibited aggregates of truncated hexagonal pyramid-shaped SiC crystals that were a few hundreds nanometers in size, as evidenced by scanning electron microscopy. Transmission electron microscopy and electron diffraction revealed that the crystals contained stacking faults along [111] of the cubic lattice of β-type.
