Ion implantation and diffusion of zinc in dense SnO₂ ceramics

抄録

We studied the diffusion of Zn in dense SnO₂ ceramics by using secondary ion mass spectrometry (SIMS). Dense SnO₂ ceramics with additives of 6 mol.% MgO and 0.2 mol.% Sb₂O₅ were synthesized, and Zn was implanted in the SnO₂ ceramics by ion implantation technique. The implanted samples were annealed at 850–1200°C, and the concentration profiles of Zn were evaluated by SIMS. The temperature dependence of Zn diffusion at 850–950°C could be expressed as D_Zn[cm²/s] = 3.3 × 10⁶ exp(−463.5[kJ/mol]/RT). These results in relation to the fabrication process of SnO₂ with added ZnO was then discussed.