Correlation between a dielectric anomaly and a phase transition of sintered phosphorus doped WO₃ ceramics

抄録

Phosphorus doped WO₃ (P_xW_1−xO₃) ceramics were fabricated by a solid state reaction. Temperature and frequency dependence of dielectric properties for the P_xW_1−xO₃ (x = 0–0.15) ceramics were evaluated at the temperature between −20 to 80°C. The dielectric constant of the P_0.05W_0.95O₃ ceramic was 3600–5800 at the frequency range from 1 kHz to 1 MHz in the room temperature, and the dielectric loss of the P_0.05W_0.95O₃ ceramic were less than 0.1 at the frequency of higher than 160 kHz. The dielectric anomaly peak of the WO₃ ceramic has been observed at 20°C, and the dielectric anomaly peak of the P_0.05W_0.95O₃ ceramic has been observed at about 0°C. The interaction between temperature dependence of dielectric properties (dielectric anomaly) ceramics and structural change of the WO₃ and P_0.05W_0.95O₃ were evaluated by Raman spectra.