Fabrication and characterization of bismuth ferrite as an electron transport layer in perovskite photovoltaic devices

抄録

BiFeO₃ thin films were fabricated by a simple spin-coating method as an electron transport layer in CH₃NH₃PbI₃-based photovoltaic devices. Single-phase BiFeO₃ was obtained, which was confirmed by X-ray diffraction. To characterize photovoltaic properties, BiFeO₃/CH₃NH₃PbI₃-based photovoltaic devices were fabricated by different preparation steps for CH₃NH₃PbI₃ layer, and current density–voltage characteristics of the photovoltaic devices showed rectifying behaviors. Comparing with the BiFeO₃/CH₃NH₃PbI₃ photovoltaic device fabricated by a 1-step method, the conversion efficiency of the device fabricated by a 2-step method was improved. Bandgaps of the BiFeO₃ and CH₃NH₃PbI₃ layers were also determined from optical absorption measurements.