抄録
It is demonstrated that a Contactless Flash Technique (CFT) can be employed to fabricate large SiC platelets. The rapid crystal growth of the platelets is attributed to the high temperatures (estimated ≈2300°C) reached by the sample during the 33 s process. The SiC platelets consisted of elongated hexagonal crystals (thickness between 2–4 µm, length up 50–100 µm) with their c-axis corresponding to the slow growth direction. The mechanisms involved in the development of the platelet morphology are discussed in relation to well-established literature on the conventional growth of SiC platelets.
