Reactive formation of AlN precipitates and epitaxial interface in TiN1−x–AlN composites

Zhanwen HE; Mingzhi WANG; Shuai XU; Yucheng ZHAO; Qin ZOU

doi:10.2109/jcersj2.16201

Technical reports

Reactive formation of AlN precipitates and epitaxial interface in TiN₁₋_x–AlN composites

Zhanwen HE, Mingzhi WANG, Shuai XU, Yucheng ZHAO, Qin ZOU

著者情報

キーワード: Ceramic composites, Precipitate, Titanium nitride, Aluminum nitride, Epitaxial interface

ジャーナルフリー

2017 年 125 巻 1 号 p. 46-49

DOI https://doi.org/10.2109/jcersj2.16201

詳細

抄録

Dispersion of AlN precipitates was observed in powder-sintered nitrogen-deficient TiN₁₋_x–AlN composites at 1400–1600°C. The AlN nano-precipitates presented epitaxial interface with TiN₁₋_x. The phase development and chemical compositions at the interface of TiN₁₋_x/AlN diffusion couple indicated that AlN decomposition occurred during sintering, N atoms diffused into TiN₁₋_x formed stoichiometric TiN, and atoms diffused across TiN gave rise to the precipitate of AlN in TiN₁₋_x.

責任著者(Corresponding author)

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