Synthesis of GaN crystals through the reaction of gallium with lithium amide

抄録

Gallium nitride (GaN) crystals were synthesized through the reaction of Ga with LiNH₂ at temperature ranging from 450 to 800°C under NH₃ atmosphere. Hexagonal GaN crystals with a diameter of approximately 100 µm were obtained. A mechanism that can increase the crystal size during the synthesis of GaN crystals has been discovered. Ga reacted with LiNH₂ to form GaN particles at the first step. Afterward, Li₃GaN₂ was formed through the reaction of GaN particles and LiNH₂. At the second step, the growth of GaN crystals continuously occurred through the reaction of Li₃GaN₂.