Preparation and characterization of porous NiO thin films through thermal decomposition of Ni-containing metal organic framework thin layers

抄録

We report herein that porous and electrochemically active NiO thin films were prepared through the deposition and thermal decomposition of a Nickel-containing metal organic framework. First, Ni₃(HCOO)₆ thin film layers were deposited on an electrically conductive substrate, then the layers were thermally decomposed into NiO in a temperature range from 543 to 673 K. The electrochemical response of the resultant NiO thin films was highest when the thermal decomposition temperature was as low as 543 K. The cylcic voltammetry revealed that the current response of the present thin film with the highest performance was twice larger than a previously reported one. The deposition of a Ni₃(HCOO)₆ thin film by a chemical bath technique followed by thermal decomposition may be a facile and promising route to obtain binder-free, porous metal oxide layers for electrochemical applications.