Low-temperature film deposition of all-proportional PbZrO₃–PbTiO₃ system using microwave-assisted hydrothermal reaction

抄録

Thin films of all-proportional PZT system, i.e., Pb(Zr_yTi_1.00−y)O₃ with y = 0–1.00, were deposited by hydrothermal deposition with a low reaction temperature of 150 °C. The PZT films were grown epitaxially on the surface of (100)SrTiO₃:La substrates via a microwave-assisted hydrothermal reaction using various input ratios of precursor chemicals x = [ZrOCl₂]/([ZrOCl₂] + [TiO₂]), which included more Zr ions (or less Ti ions) with a higher y value than that of the input ratio x. Dielectric and ferroelectric parameters for the resulting films, i.e., the relative dielectric constant (ε_r) and remanent polarization (P_r), exhibited maxima at the certain Zr/Ti ratio y = ∼0.60 though these parameters were relatively lower than those of the conventional films.