Silicon Carbide Synthesis by Sublimation Method

抄録

SiC properties change with grain size, orientation, and surface morphology. We prepared polycrystalline 3C-SiC on graphite by sublimation method using 6H-SiC powder compacts as source materials. The present study investigated the distance between the substrate and the SiC source, temperature gradients between the substrate and the SiC source=20-40°C/mm, under the constant experimental conditions (argon pressure=133 kPa, substrate temperature=1580°C, deposition time=30 minutes) Deposited crystals showed clear hexagonal habit and yellowish color. The maximum growth rate was obtained with preferred (111) orientation, and at 13 mm distance between the substrate and the SiC source.