Characterization of Ferroelectric (Y,Yb)MnO3 Films Prepared  by Chemical Solution Deposition Method

Kazuyuki SUZUKI; Desheng FU; Kaori NISHIZAWA; Takeshi MIKI; Kazumi KATO

doi:10.14852/jcersjsuppl.112.0.S473.0

Journal of the Ceramic Society of Japan, Supplement 112-1, PacRim5 Special Issue

Session ID : 6

DOI https://doi.org/10.14852/jcersjsuppl.112.0.S473.0

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Host: The Ceramic Society of Japan

Co-host: Iketani Science and Technology Foundation, International Ceramic Federation, Commemorative Organization for the Japan World Exposition '70, The American Ceramic Society, The Australasian Ceramic Society, The Chinese Ceramic Society, The Korean Ceramic Society, Joint Research Consortium of Synergy Ceramics/Fine Ceramics Research Association, Nanotechnology Researchers Network Center of Japan, The Special Coordination Funds for Promoting Science and Technology, Japan National Tourist Organization, Aichi Prefectural Government, CASIO SCIENCE PROMOTION FOUNDATION, DAIKO FOUNDATION, Nagoya Convention and Visitors Bureau, The Asahi Glass Foundation, The Kao Foundation For Arts And Sciences, The Murata Science Foundation, The Ogasawara Foundation for the Promotion of Science & Engineering, ASAHI GLASS CO., LTD. Research Center, CENTRAL GLASS CO., LTD., ELECTRIC GLASS INDUSTRY ASSOCIATION OF JAPAN (EGAJ), Hattori Company, Ltd., Hitachi Research Laboratory, Hitachi, Ltd., HOYA CORPORATION, INAX Corporation, ITOCHU CERATECH CORP., Japan Cement Association, KYOCERA Corporation, KYUSHU REFRACTORIES CO., LTD., MINO CERAMIC CO., LTD., Murata Manufacturing Co., Ltd., NGK INSULATORS LTD., NGK SPARK PLUG CO., LTD., NICHIAS Corporation, NIKKO COMPANY, Nippon Electric Glass Co., Ltd., Nippon Sheet Glass Co., Ltd., NORITAKE CO., LIMITED, Tokuyama Corporation, TOTO LTD.

Papers

Characterization of Ferroelectric (Y,Yb)MnO₃ Films Prepared by Chemical Solution Deposition Method

Kazuyuki SUZUKI, Desheng FU, Kaori NISHIZAWA, Takeshi MIKI, Kazumi KATO

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Keywords: (Y,Yb)MnO₃, Thin film, Chemical solution deposition, Ferroelectric property, MFIS, c-axis orientation, C-V curve

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Abstract

The (Y,Yb)MnO₃ films were prepared on Pt/TiO_x/SiO₂/Si and Y₂O₃-buffered n-type Si(111) substrates using alkoxy-derived precursor solutions and followed by rapid thermal annealing in Ar. The (Y,Yb)MnO₃ films crystallized to hexagonal phase and had high crystallinity and high degrees of c-axis orientation. It was found that the substitution of Y by Yb in YMnO₃ lowered the crystallization temperature. The YbMnO₃ film crystallized at 700°C in Ar showed good ferroelectric properties. The retention time was over 10⁵ s and the polarization did not change after 10¹⁰ switching cycles. The leakage current density of the Pt/YbMnO₃/Y₂O₃/Si capacitor was below 1.0×10^-8 A/cm² at an applied voltage of 5 V. The counterclockwise C-V hysteresis induced by ferroelectric polarization switching was observed in the Pt/YbMnO₃/Y₂O₃/Si capacitor.

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