Journal of the Ceramic Society of Japan, Supplement
Online ISSN : 1349-2756
ISSN-L : 1349-2756
Journal of the Ceramic Society of Japan, Supplement 112-1, PacRim5 Special Issue
セッションID: 6
会議情報

主催: The Ceramic Society of Japan

共催: Iketani Science and Technology Foundation, International Ceramic Federation, Commemorative Organization for the Japan World Exposition '70, The American Ceramic Society, The Australasian Ceramic Society, The Chinese Ceramic Society, The Korean Ceramic Society, Joint Research Consortium of Synergy Ceramics/Fine Ceramics Research Association, Nanotechnology Researchers Network Center of Japan, The Special Coordination Funds for Promoting Science and Technology, Japan National Tourist Organization, Aichi Prefectural Government, CASIO SCIENCE PROMOTION FOUNDATION, DAIKO FOUNDATION, Nagoya Convention and Visitors Bureau, The Asahi Glass Foundation, The Kao Foundation For Arts And Sciences, The Murata Science Foundation, The Ogasawara Foundation for the Promotion of Science & Engineering, ASAHI GLASS CO., LTD. Research Center, CENTRAL GLASS CO., LTD., ELECTRIC GLASS INDUSTRY ASSOCIATION OF JAPAN (EGAJ), Hattori Company, Ltd., Hitachi Research Laboratory, Hitachi, Ltd., HOYA CORPORATION, INAX Corporation, ITOCHU CERATECH CORP., Japan Cement Association, KYOCERA Corporation, KYUSHU REFRACTORIES CO., LTD., MINO CERAMIC CO., LTD., Murata Manufacturing Co., Ltd., NGK INSULATORS LTD., NGK SPARK PLUG CO., LTD., NICHIAS Corporation, NIKKO COMPANY, Nippon Electric Glass Co., Ltd., Nippon Sheet Glass Co., Ltd., NORITAKE CO., LIMITED, Tokuyama Corporation, TOTO LTD.

Papers
Preparation and Dielectric Properties of Ca-Doped Sr2(Nb0.3Ta0.7)2O7 Thin Films by Chemical Solution Deposition Method
Yukinobu YURA, Toshiaki YAMAGUCHI, Wataru SAKAMOTO, Koichi KIKUTA, Shin-ichi HIRANO
著者情報
キーワード: Sr2(Nb, Ta)2O7, Ferroelectric, Nonvolatile memory, Thin film, CSD, Doping
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Ca-doped Sr2(Nb, Ta)2O7 thin films have been synthesized by the chemical solution deposition. Homogeneous and stable precursor solutions were prepared by controlling the reaction of starting metal alkoxides. The improvement of ferroelectric properties of the Sr2(Nb, Ta)2O7-based films were achieved through the Ca-substitution for Sr sites in the Sr2(Nb0.3Ta0.7)2O7 structure. (Sr1-xCax)2(Nb0.3Ta0.7)2O7 crystallized in the single-phase of (Sr, Ca)2 (Nb0.3Ta0.7)2O7 in the case of x<0.15 without any formation of the second phase such as Ca2Ta2O7. The crystallization temperature of the layered perovskite (Sr0.9Ca0.1)2(Nb0.3Ta0.7)2O7 thin films on Pt/Ir/Ti/SiO2/Si substrates was found to be below 700°C. (Sr0.9Ca0.1)2(Nb0.3Ta0.7)2O7 thin films crystallized at 750°C exhibited the typical ferroelectric hysteresis loop with Pr of 0.58 μC/cm2 and Ec of 80 kV/cm.
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© 2004 The Ceramic Society of Japan
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