抄録
The oxide film on Al-Mg alloy that grew in pure water at low temperatures was investigated with respect to the rate of growth and structure, motivated by development of processes to cleans electronic parts with water-based solutions. The film was composed of amorphous Al (OH)3. Growth of the film was influenced by solubility of the hydroxide of the metal dissolved in pure water. The rate of growth the film in pure water was 70 times faster than moist air. The apparent activation energy of the growing rate pronouncedly changed at about 60°C being 80kJ/mol at temperatures below about 60°C and 10kJ/mol at temperatures above about 60°C.
