抄録
The entry and transport of hydrogen in phos-phorous-, boron-, sulfur- and bismuth-implanted pure nickel specimens with a fluence range of 1×1015 to 1×1017/cm2 have been investigated using an electrochemical permeation technique. The steady state permeation current density increases with increasing fluence for the implanted specimens except for sulfur-implanted specimens. The break-through time of the transient curves is found to depend largely upon fluence and implanting elements. In addition, a removal method for dissolving implanted layers using 0.2% HF solution is applied to investigating an effect of implanted elements themselves on hydrogen permeation transients. The results are explained by considering shallow and deep hydrogen traps, compressive stress, the change in phase structure of implanted layer and so on.
