抄録
Hot electron bolometer mixers (HEBM) are expected to be used as low-noise heterodyne mixers in the terahertz frequency range. We are developing quasi-optical HEBMs for applications such as atmospheric remote sensing and radio astronomy in the terahertz frequency range. Therefore, we developed a fabrication method using niobium nitride (NbN) ultrathin films deposited on a silicone (Si) substrate for terahertz applications. First, a magnesium oxide buffer layer 50 nm thick was deposited on a Si substrate at approximately 525 °C. After deposition of this layer, NbN ultrathin films were deposited at ambient temperature. Using the buffer layers, we found the transition temperature of the 3.5-nm-thick NbN thin films to be approximately 10 K. The same method was applied to fabricate NbN-HEBMs on a Si substrate. The fabricated quasi-optical mixers were designed to operate at 3.1 THz. The receiver noise temperature was found to be approximately 1930 K (DSB) at 3.1 THz.
