低温工学
Online ISSN : 1880-0408
Print ISSN : 0389-2441
ISSN-L : 0389-2441
研究論文
シード層を導入したIBAD-MgO 基板上 BaHfO3 添加SmBa2Cu3Oy 薄膜の臨界電流密度向上
渡邊 俊哉吉田 隆一野 祐亮吉積 正晃和泉 輝郎
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2015 年 50 巻 1 号 p. 13-18

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The development of rare earth (RE) Ba2Cu3Oy (REBCO) coated conductors has been carried out by many groups. The critical current density (Jc) in high magnetic fields needs to be improved for superconducting applications. We have fabricated BaHfO3 (BHO)-doped SmBa2Cu3Oy films on ion beam-assisted deposition (IBAD)-MgO substrates using pulsed laser deposition (PLD). In this study, we introduce a seed layer technique. As a result, the appropriate growth temperature (Ts) is expanded to higher temperature range without BaCeO3 outgrowth around the interface of the SmBCO and CeO2 cap-layer. We were able to control the configurations of the BHO nanorods within the SmBCO films as compared to the conventional PLD method. The SmBCO + BHO (1.4 vol.%) films, which were fabricated at a Tsupper of 900ºC, showed that the Jc in the magnetic field (B // c) was improved as compared to pure-SmBCO films. Furthermore, the global pinning force density reached 21 GN/m-3 at 77 K in B = 2 T.
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© 2015 公益社団法人 低温工学・超電導学会 (旧 社団法人 低温工学協会)
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