2020 Volume 13 Pages E19-002-1-E19-002-13
This paper discusses a transient thermal testing approach for Gallium Nitride High Electron Mobility Transistor (GaN HEMT) with p-type gate. Conventional transient thermal characterization methods for Si (Silicon) based device have difficulties in characterizing GaN HEMTs. The non-ideal characteristics of such power devices make thermal characterization difficult. The proposed transient thermal characterization method for GaN HEMTs uses the knee voltage of PN junction in gate and source of GaN HEMT as a junction temperature sensor. The proposed method enables the acquisition of the time response of temperature with sufficient accuracy. The proposed method is validated on a commercially-available GaN HEMT device.
