Bonding Abilities of Pressure-assisted Sintered Copper for Die-Bonding of Large Chips

Dai Ishikawa; Bao Ngoc An; Matthias Mail; Helge Wurst; Benjamin Leyrer; Thomas Blank; Marc Weber; Hideo Nakako

doi:10.5104/jiepeng.13.E20-003-1

Short Note

Bonding Abilities of Pressure-assisted Sintered Copper for Die-Bonding of Large Chips

Dai Ishikawa, Bao Ngoc An, Matthias Mail, Helge Wurst, Benjamin Leyrer, Thomas Blank, Marc Weber, Hideo Nakako

著者情報

キーワード: Copper Sinter Die-bonding Paste, Mechanical Pressure-assisted Bonding Process, Bonding Ability, Large Chip, Molecular Dynamics Simulation

ジャーナルフリー

2020 年 13 巻 p. E20-003-1-E20-003-3

DOI https://doi.org/10.5104/jiepeng.13.E20-003-1

詳細

抄録

This paper describes sintering properties and bonding abilities of mechanical pressure-assisted sintered copper (pressure-sintered Cu) in N₂ atmosphere for power devices with large chips. The pressure-sintered Cu showed equal or improved sintering and bonding properties compared with pressureless-sintered Cu and pressure-sintered silver (Ag). The bonding abilities of pressure-sintered Cu on two different Ag plating (Ti/Ni/Ag, Ti/Ni/Au/Ag) were also investigated. The Cu pressure-sintered at 2 MPa and 300°C for 5 min was successfully bonded to 10 × 10 mm² chips with Ti/Ni/Ag. Thus, pressure-sintered Cu has a potential as a reliable die-bonding material for power devices with large chips.

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