抄録
To remove dust particles accumulated on pad surfaces or probe tips after they contact each other during semiconductor wafer testing, a cleaning process is required. On the one hand, scrubbing is an efficient method to remove the oxide layer on the surfaces. However, excessive scrubbing degrades the probe's mechanical properties and leads to the accumulation of excessive dust and plastic deformation failure of the pad surface. Therefore, we have developed a new contact probe that allows only a vertical displacement of the probe tip on the pad surface to minimize the horizontal displacement for scrubbing. This probe is fabricated using a beryllium-copper alloy and is characterized by a two-beam structure. The matrix method is employed to investigate the contact probe structure and the results are compared with the data obtained with a commercial finite element method. Furthermore, electrical contact resistance is measured experimentally and determined theoretically using Holm's theory. A durability test is conducted to simulate more than 100,000 contacts between the probe tip and the pad; this allows us to examine the probe tip's endurance and whether the electrical resistance of the contact could be sustained. Our results suggest that the two-beam structural probe ensures a stable electrical contact resistance when the contact force is within specific limits and the horizontal displacement for scrubbing is minimized.
