High-Temperature-Resistant Interconnections Formed by Using Nickel Micro-plating and Ni Nano-particles for Power Devices

抄録

The improvement of interconnection technology is becoming a top priority for the operation of SiC devices at high temperatures. We proposed a new interconnection method using nickel electroplating to form bonds between chip electrodes and substrate leads. We also newly proposed low-temperature nickel nanoparticle sintering to form die bonding connections. SiC devices assembled with these new connection methods operated successfully in a high-temperature environment of about 300°C. We confirmed that these methods had adequate potential as an advanced heat resistant package in comparison with conventional interconnections.